Welcome to the Kurt J. Lesker Company.  

Sign In | Register

Current Region: International (Change) | Contact Us |   RSS   Twitter   LinkedIn   YouTube

Close

Please select your country or region to be
directed to the appropriate Lesker site.

Blog


Entries for year: 2015

High Power Impulse Magnetron Sputtering (HIPIMS)

July 29, 2015 |

High Power Pulsed Magnetron Sputtering (HPPMS) or High Power Impulse Magnetron Sputtering (HIPIMS) is a type of magnetron sputtering technique where high power pulses of hundreds of microseconds are applied to the magnetron target at frequencies ranging from a few Hz to several kHz.

Read More

Tags: INNOVATE | Systems | Vacuum Science



KJLC® Deposition Equipment Enables High Quality Plasmonic Films

July 29, 2015 |

Plasmonics is an important field of research with applications in bio-sensing, photocatalysis, solar cells and high-speed computing, among others. The fundamental technologically enabling features of plasmonics are sub-wavelength confinement of electromagnetic fields and ultra-strong enhancement of those fields. Highly-reflective metals are the predominant material choice for plasmonic devices. More specifically, Gold and Silver have been the most studied materials to date. Aluminum and Copper are burgeoning plasmonic materials which offer CMOS compatibility and low cost. Furthermore, Aluminium opens up the possibility of ultraviolet plasmonic devices which have recently been shown to have applications in bio-sensing and colour filters.

Read More

Tags: INNOVATE | Systems | Vacuum Science



KJLC Is Co-Developing SPION Technology

April 23, 2015 |

A multipurpose source has been constructed that can operate either as a magnetron sputtering cathode, an end-Hall ion source, or both simultaneously depending on the applied voltage. A conical electrode with a major diameter of 6.5 cm and included angle of 90 degrees is combined with a magnetic field that forms a plasma trap above the electrode and also extends beyond the electrode opening. A hot filament generates electrons when operating as an ion source. Using an Al electrode, all three modes of operation have been demonstrated. Sputtering with an applied voltage of -390 V produced an Al film at a specific deposition rate of 4.0 (nm/min)/(W/cm2). By applying +340 V to the electrode at an Ar pressure of 1 mT and filament current of 25 A, a thermally grown SiO2 layer was etched at a rate of 5.2 nm/min. Finally, using a 40 kHz bipolar power supply to apply an alternating positive and negative voltage to the electrode at a total power of 200 W, a reactively sputtered Al2O3 film was deposited arc-free at a specific rate of 1.1 (nm/min)/(W/cm2). The values for n and k (632 nm) for the Al2O3 were 1.67 and 0.001 respectively.

Read More

Tags: Vacuum Science | Deposition Techniques



Highly Engineered GeOx layers for FinFETs by Plasma Enhanced Atomic Layer Deposition

March 25, 2015 |

Germanium (Ge) is a promising candidate to enhance p-channel metal oxide silicon field transistor (MOSFET) device performance. The successful development of Ge-based field effect devices requires the integration of a high-quality dielectric with equivalent oxide thickness (EOT) less than 1 nanometer that forms an electrically well behaved semiconductor dielectric interface. Although GeOx/Ge has been found promising, the thermodynamic instability as well as the relatively low dielectric constant of GeOx requires an alternative approach. The utilization of an ultrathin Si layer, to modify the semiconductor-dielectric interface from Ge into Si, is a viable approach that has been successfully demonstrated; however, the introduction of a thin Si layer into the gate stack is incompatible with the 3D FinFET manufacturing process flow and also leads to increased EOT. It is, therefore, desirable to develop a multilayer gate-stack by atomic layer deposition (ALD), where an ultrathin GeOx layer can be thermodynamically stabilized and combined with a high-k dielectric film to meet the stringent requirement of low interface trap density and large capacitance density while maintaining a low gate leakage under the constraint of full compatibility with modern 3D FinFET geometries.

Read More

Tags: INNOVATE | Systems | Vacuum Science



ISO:9001 The Kurt J. Lesker Company is an ISO:9001 certified company. Copyright ©1996-2017 Kurt J. Lesker Company® All rights reserved.