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Integrated System for High-k Metal Gate Development

March 25, 2015 | By KJLC Innovate

Kurt J. Lesker Company and Penn State University have jointly developed a multi-technique process tool enabling high-k metal gate development for high mobility channel transistor technology.

The dual process chamber design allows preparation of pristine semiconductor surfaces and their passivation (UHV-MBE), while the PEALD system provides state-of-the-art high-k deposition capabilities. Both process chambers are equipped with analytical ports for in-situ process monitoring and control by spectroscopic ellipsometry (SE).

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INNOVATE Systems Vacuum Science



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