EC-I Series – In-line Deposition Stages
Substrate at a variable glancing angle to the mounting flange
- Substrate heating to 1200°C
- Continuous substrate rotation up to 60rpm
- Substrate lift/lower for transfer
- DC/RF substrate biasing
- Homing for automatic transfer alignment
- Adjustable deposition height
- SEMI standard 2" to 200mm diameter substrate handling
- SiCg or sSiC heater technology
- True UHV performance
The EC-I series is the latest model in the very successful range of EpiCentre stages, providing state-of-the-art performance for various growth and deposition techniques including MBE, sputtering and CVD. It represents the latest advance in modular 'in-line' deposition instruments which offer continuous substrate heating, rotation, biasing, and facilities for substrate transfer, while maintaining true UHV compatibility.
The series includes models to accommodate SEMI standard wafers from 2" to 200mm diameter, and special substrate cradles can be provided to accommodate specific substrate shapes and designs up to 200mm (8.5") diameter.
The EC-I series benefits from the success of UHV Design's unique hollow magnetic coupling technology using the CF38 mounted MagiLift drive. This single compact device provides magnetically coupled rotation and axial motion. The hollow drive technology facilitates the passing of services through the drive to a stationary wafer heating module in close proximity to the substrate, eliminating the need for vulnerable high current rotational connections. The MagiLift provides continuous rotation of the substrate cradle for better temperature and layer uniformity, plus a pneumatically actuated 25mm lift/lower for substrate transfer. An external magnetic proximity home switch is also provided for position sensing the internal rotor to align the stage to within 0.1° for automated substrate transfer.
The stationary heater module employs multiple refractory metal Molybdenum heat shields to minimize heat loss, (Inconel and other materials available up on request), and a choice of either SiCg (SiC coated graphite) or sSiC (ß phase solid SiC) heater elements, both of which are capable of heating wafers to 1200°C and operating within O2 rich environments.
The electrically isolated substrate cradle can be biased with either DC or RF to facilitate sputter cleaning prior to deposition or for better control of deposition kinetics. 'Faraday Dark Space Shielding' is supplied as standard on all stages. This confines plasma to the substrate cradle region. Our propriety substrate biasing technology provides unrivalled flicker-free performance, typically with zero maintenance and long operational life. The deposition height adjustment option allows the Z position of the substrate to be adjusted to optimize the distance from the deposition flux. Deposition shields can also be provided to protect the heater module.
The stages can be mounted in any orientation, although they are most commonly mounted vertically with the wafer facing up or down and parallel to the mounting flange. Other orientations can be accommodated with special wafer holders. Options are also available to configure EpiCentres for higher pressure and corrosive environments.
The series has a full suite of options including choice of system mounting flanges, manual or pneumatic substrate shutters and thermocouple materials.
Stage Configuration: EC-I Series
|Substrate diameter||2" (50mm)||100mm||150mm||200mm|
|CF200/10" OD system flange||✓||✓||x||x|
|CF250/12" OD system flange||✓(s)||✓(s)||✓||x|
|CF300/14" OD system flange||✓(s)||✓(s)||✓(s)||✓|
|CF350/16.5" OD system flange||✓(s)||✓(s)||✓(s)||✓(s)|
|Heater element||Silicon Carbide coated graphite (SiCg) as standard (see options below)|
|Substrate rotation||Stepper motorized|
|Cradle movement for substrate transfer||25mm pneumatic via MagiLift|
|Insertion length (flange face to substrate)||240mm (+25mm for substrate transfer)|
|Deposition height adjustment||Not adjustable as standard (see options below)|
|Achievable temperature||1200°C (based on heating a Molybdenum sample)|
|STAGE MOTION OPTIONS|
|Azimuthal rotation||24 V DC motor or Smart Motor or no motor (gearbox only fitted, customer supplies and fits NEMA 23 frame motor)|
|Deposition height adjustment||Z = 50mm (other options available upon request)|
|Deposition height actuation||Stepper, 24 V DC motor or Smart Motor or no motor (gearbox only fitted, customer supplies and fits NEMA 23 frame motor)|
|DC & RF bias||DC bias ≤ 1kV, RF ≤ 100W (including dark space shielding)|
|Substrate shutter||Manual, pneumatic or motorized. See system flange options (s)|
|Heater element||Solid Silicon Carbide (sSiC)|
|Heater module shield||Inconel heat shields for higher O2 partial pressures (limited to 1000°C)|
|Cradle movement for substrate transfer||Manual hand wheel actuation (standard actuation is pneumatic)|
|Thermocouple options - with RF / DC bias||UHV Option: 2 x CF bellows-sealed sheathed Type K or HV option: 2 x O-ring sheathed Type K|
|Thermocouple options - with no RF / DC bias||1 x CF (unsheathed) Type K or Type C|
|Homing sensor||24V pre-wired DC NPN sensor kit|
|Deposition shield cans to protect stage mechanism||Available on request|
|Custom insertion length||Available on request|
KEY: ✓ = Substrate size can be accommodated on specified system flange
✓(s) = Substrate shutter option is available on specified system flange
x = Not available
Cooled EC-I Series (CEC-I)
The Cooled EC-I series (CEC-I) provides state-of-the-art performance for various growth and deposition techniques including MBE, sputtering and CVD.
CEC-I offers continuous substrate rotation, high temperature and high uniformity heating with the ability to statically cool a substrate using a novel sample holder design to provide uniform cooling. CEC-I also offers 1kV DC & 100W RF biasing with facilities for substrate transfer, while maintaining true UHV compatibility.
CEC-I is designed to accept SEMI standard 6" wafers.
- Substrate heating to 800°C
- Continuous substrate rotation during heating
- Cooling of static substrate to -100°C
- Homing for automatic transfer alignment
- 1kV DC & 100W RF substrate biasing
- SEMI standard 6" Ø substrates
To facilitate sample transfer the stage head is retracted as shown on the main image. This allows the substrate holder to be placed on the holder manually with the chamber at atmosphere or by using a transfer arm under vacuum.
In heating mode, the substrate can be rotated at 20rpm whilst heating to 800°C. 1kV DC, 100W RF bias can be applied in this mode.