ALD-150LX™ – Designed for advanced research & development applications

Overview

The Kurt J. Lesker Company^® (KJLC^®) ALD150LX™ is an Atomic Layer Deposition (ALD) system designed specifically for advanced research and development (R&D) applications. Innovative ALD150LX design features, like our Patented Precursor Focusing Technique™ and advancements such as our Patent Pending Ultrahigh Purity (UHP) Process Capability provide unparalleled flexibility and performance. With an emphasis on enabling and supporting innovative, cutting edge technology at the R&D level, the ALD150LX serves not only as a stand-alone platform, but provides connectivity with additional process and analysis modules in a cluster tool configuration.

ALD150LX cluster tool connectivity eliminates unwanted atmosphere exposure between critical process and analysis steps to protect sensitive surfaces, layers and their interfaces. This connectivity includes the integration of additional ALD and analysis modules, as well as other KJLC thin film deposition technologies for multi-technique process and analysis capability and support that are second-to-none in the industry. Combined quality, flexibility and performance, as well as multi-technique process and analysis capability make the ALD150LX an innovative, best-in-class design.

Technical Description

Process Chamber

• Thermal or plasma-enhanced (PEALD) configurations
• Smart vacuum design, employing UHV-type sealing enabling UHP process conditions
• Perpendicular flow design
• Four separate chamber inlets for precursor delivery (not including plasma)
• Analytical ports for in-situ ellipsometry or other techniques
• Horizontal substrate loading port (up to 150 mm diameter substrates)
• Independent substrate heater stage

Precursors

• High-performance, remote inductively coupled plasma (ICP) source with up to eight plasma gas lines
• ICP source equipped with metal and differentially pumped elastomer seals enabling UHP process conditions
• Integral cooling allows use of high ICP power (1,000 W)
• Up to twelve precursor sources with four separate chamber inlets (not including plasma)
• Variety of precursor delivery options are available including vapor draw, flow-through and pulsed gas delivery
• Exposure modes include dynamic, static and optional Variable Residence Mode™ (VRM™)
• Ozone source

Typical Processes

• Al₂O₃, TiO₂, SiO₂, Ta₂O₅, HfO₂, ZrO₂, HZO, ZnO, AZO, AIN, TiN, and GaN (many others available, please inquire)

Features

Process Chamber

The ALD150LX process chamber can be configured for purely thermal or plasma-enhanced ALD. A combination of metal and differentially pumped elastomer seals prevent atmospheric components (i.e., N₂, O₂ and H₂O) from entering the reaction zone where the substrate is located, thereby promoting a UHP process environment. In particular, UHP conditions reduce the levels of background oxygen impurities to limit exposures before, during and after film growth for high-quality non-oxide based materials, as well as their interfaces. Oxygen impurities are also a source of parasitic CVD during oxide film growth. Our unique perpendicular flow design enables isolated, uniform precursor delivery, and promotes increased precursor utilization as well as longer mean times between service intervals. To avoid unwanted material buildup and particulate formation inside delivery channels, four separate chamber inlets (not including plasma) are available for precursor isolation. For example, separate inlets can be used to isolate metal organic precursors and co-reactants to prevent deposition in delivery lines and valves.

• Plasma-Enhanced ALD (PEALD) configuration optional
• Combination of metal and differentially pumped elastomer seals enabling UHP process conditions
• Fully laminar flow, and fully inert-gas swept dead spaces keep reactor clean and reduce outgassing and virtual leaks
• Analytical ports (70° angle of incidence) for in-situ ellipsometry (ellipsometer optional)
• Four separate independently-heated inlet lines for precursor delivery to prevent unwanted buildup in delivery channels
• Independent substrate heater stage and outer chamber casing for excellent temperature control and uniformity
• 304L stainless-steel construction
• Accessible, low maintenance design

Our Patented Precursor Focusing Technology™ (PFT™) combines an inactive curtain gas barrier with centralized precursor delivery and pumping to minimize interactions with process chamber sidewalls, and keep precursors out chamber ports for improved precursor utilization and extended maintenance intervals. Analytical ports for ellipsometer integration are a standard feature on the ALD150LX (ellipsometer optional). Substrates (up to 150 mm diameter) are introduced through a horizontal loading port. Once inside a vertical pin lift mechanism is used to complete transfer by picking and placing substrates directly onto the surface of the substrate heater stage.

Precursor Delivery

The base ALD150LX system includes two heated, single-source vapor draw modules with two separate chamber inlets (to avoid unwanted buildup in delivery line components), that operate in dynamic or static exposure modes. For the full range of precursor delivery options currently available, please refer to the Options Tab for more information.

Heating

The ALD150LX employs superior heating and temperature control that complements our unique UHP and PFT designs by further enhancing overall system performance. In particular, temperature uniformity and control helps to prevent unwanted precursor vapor condensation or deposition, and subsequent vaporization resulting in parasitic effects that reduce film quality and compromise chamber cleanliness.

Upper temperature limits for heated system components are as follows:

• Substrate heater stage 600°C
• Chamber and precursor delivery lines 250°C
• Precursors and delivery valves 200°C
• Delivery Line heating up to 250°C
• Up to 200°C Valve Heating
• Redundant overtemperature thermocouples for all heated zones to minimize thermal runaway; software interlocks

Our unique heater design combined with independent heat zones for precursors, delivery valves and lines, process chamber (multiple zones), substrate heater as well as foreline components provide unparalleled temperature control and uniformity of heated system components.

Options

Plasma Option

The ALD150LX plasma option is a fully integrated package that incorporates a high-performance, remote inductively coupled plasma (ICP) source design with up to eight plasma gas lines/channels. The use of expert vacuum design, including ultra high vacuum (UHV) type metal and differentially-pumped elastomer seals prevent atmospheric components (i.e., N₂, O₂ and H₂O) from entering the ICP source, thereby promoting a UHP process environment. In particular, UHP conditions reduce the levels of background oxygen impurities to limit exposures before, during and after film growth for high-quality non-oxide based materials, as well as their interfaces. Oxygen impurities are also a source of parasitic CVD during oxide film growth. Typical plasma gases include oxygen, nitrogen and hydrogen. An alternate bypass channel is available for maintaining continuous gas flow during PEALD processing making the need to start-and-stop gas flow optional. Our advanced plasma source design is complimented by our state-of-the-art eKLipse software and controls package.

The base plasma option includes the following components:

• ICP source equipped with metal and differentially pumped elastomer seals enabling UHP process conditions
• Cylindrical dielectric plasma tube with helical inductive coil geometry
• 1 kW power supply operating at 13.56 MHz frequency
• Two plasma gas channels
• Self-supported, detachable auto-matching network
• Compact, modular design for ease of service

Other optional plasma features include:

• Six additional plasma gas channels
• Pump-purge manifold for gas line preparation
• Gas compatibility programmable logic controller (PLC)

An optional manifold is available for gas line preparation (i.e., pumping and purging) prior to charging. This pump-purge manifold provides built-in capacity for preparing gas lines to obtain optimal gas purity. To prevent mixing of incompatible gases (e.g., H₂ and O₂), a gas compatibility programmable logic controller (PLC) is also available.

Precursor Delivery Options

With up to twelve precursor sources that utilize four separate chamber inlets (not including plasma), the ALD150LX provides extreme process flexibility. Modules are available for gas, liquid and solid phase precursors with a host of delivery options including vapor draw, flow-through and pulsed gas delivery. A fully integrated ozone delivery option is also available. Please contact us for more information regarding our ozone option.

For delivery options that require heating, the ALD150LX employs superior heating and temperature control that complements our unique UHP and PFT designs by further enhancing overall system performance. In particular, temperature uniformity and control helps to prevent unwanted precursor vapor condensation or deposition, and subsequent vaporization resulting in parasitic effects that reduce film quality and compromise chamber cleanliness.

Precursor exposure modes include dynamic, static and Variable Residence Mode. Dynamic and static modes are standard features; Variable Residence Mode is optional. Please contact us for more information regarding our Variable Residence Mode option. The modular, scalable ALD150LX design accommodates a variety of different configurations including future expansion and upgrades.

Single-Source & Multi-Source Vapor Draw Modules

Vapor draw sources are ideal for liquid and solid phase precursors with sufficient vapor pressure such that they do not require any special assistance for effective vapor delivery other than heating. The base ALD150LX system accommodates two heated, single-source vapor draw modules with two separate chamber inlets (standard feature).

• Optional multi-source vapor draw module
• Multi-source module can include up to five vapor draw sources
• ALD150LX can accommodate up to two multi-source modules with two separate chamber inlets
• Precursor and delivery valve heating are independently controlled up to 200°C
• Delivery lines are independently controlled to 250°C
• Vapor draw modules feature true precision ALD valve timing for optimal precursor dose control

Flow-Through Vapor Delivery Module

For liquid and solid phase precursors with insufficient/low vapor pressure, flow-through sources provide enhanced vapor delivery. Our unique, modular flow-through design provides added flexibility for advanced low vapor pressure delivery and supports both flow-through and vapor draw methods.

• Maximum R&D flexibility through fully enclosed oven or independently heated precursor cylinder configurations
• ALD150LX can accommodate up to three flow-through modules with three separate chamber inlets
• Precursor and delivery valve heating independently controlled up to 200°C (oven configuration not fully independent)
• Delivery line heating independently controlled to 250°C
• True precision ALD valve timing for optimal precursor dose control
• Customers may provide their own ampoules/bubblers or choose from our selection of liquid or solid source containers designed specifically for the ALD150LX

Pulsed Gas Delivery

Pulsed gas options include our Pulsed Gas Source™ (PGS™) delivery module specifically designed for precise, accurate, high-speed dosing of toxic gases (e.g., WF₆, HCl, NH₃, H₂S, etc.). The KJLC unique PGS design utilizes a fixed charge volume (or reservoir) for precursor dosing that eliminates the need for a mass flow controller for precise, accurate delivery. To accurately, precisely, and reproducibly control the amount of precursor being delivered, high-speed ALD valve timing as well as reservoir pressure are tightly controlled through our eKLipse software and controls package.

• Designed specifically for precise, accurate high-speed dosing of toxic or reactive gases (e.g., WF₆, HCl, NH₃, H₂S, etc.)
• Eliminates the need for mass flow controllers
• Includes separate channel for pumping and purging of input line components

Substrate Transfer Options

Substrates (up to 150 mm diameter) are introduced/removed through a horizontal loading port either manually in atmosphere (using a hand held fixture or mechanical rail assembly), or by automated transfer using a load-lock (single or multi-wafer cassette) or cluster tool configuration that provide a controlled vacuum environment for substrate handling. Glove box options are also available for manual or automated transfer configurations.

Substrate transfer options include the following:

• Manual loading in atmosphere (using a hand held fixture or mechanical rail assembly)
• Automated load-lock transfer (single or multi wafer cassette)
• Cluster tool with high vacuum and robot transfer
• Glove box

Pumping & Pressure Measurement

The standard pump for the ALD150LX is a Leybold D65BCS rotary vane pump (53 cfm, PFPE prepared) with optional foreline purge/vent protection and oil filtration. A dry pump with foreline purge/vent protection, as well as a customer supplied pump are optional. A heated (150°C) capacitance manometer measures process chamber pressure.

Standard:

• Leybold D65BCS rotary vane pump, 53 cfm, PFPE prepared (or equivalent)
• Heated (150°C) capacitance manometer measures process chamber pressure

Optional:

• Foreline purge/vent protection
• Oil filtration
• Dry pump (optional Ebara ESR20N) with foreline purge/vent protection (or equivalent)
• Customer supplied pump

Glovebox Specifications

Glovebox Options

Along with the gloveboxes and system adaptor boxes the following accessories can be supplied:

• Spin Coaters
• Hot Plates
• UV Ozone Curing
• Regenerable Solvent Purification System
• Other accessories upon request

How KJLC's ALD Systems are Powering Next Gen Research

Film Sense In Situ Ellipsometer Integration

In fact, the first Film Sense FS-1 in-situ testing was performed on a Kurt J. Lesker ALD150LX reactor in 2014. The FS-1 has since been integrated on multiple Lesker ALD reactors, and has been used to characterize a wide variety of thin films including: Al₂O₃, TiO₂, HfO₂, and TiN.

The ALD150LX was designed from the ground up for advanced R&D and features remote plasma as well as in-situellipsometry as a primary means of real time process monitoring and control during ALD. Patented Precursor Focusing Technology™(PFT™) prevents unwanted film deposition on sensitive surfaces inside the reactor including the analytical port windows used for light transmission during in-situ ellipsometry. The layout of the plasma-enhanced ALD (PEALD) reactor makes installation and operation of the compact FS-1 unit simple and easy.

The Film Sense vision "to create easy-to-use and affordable ellipsometers" is especially relevant for in-situ applications. The Film Sense FS-1 realizes this vision by providing the power of Multi-Wavelength Ellipsometry, at an affordable price and compact size that is ideal for in-situ measurements. The FS-1 can provide real time thickness data with exceptional precision, which can be indispensable for the efficient development of new ALD processes. In the plot below, the "steps" in the data are direct observations of the thickness changes on the sample throughout the ALD cycles: the thickness increases and saturates as the precursor is introduced (trimethyl aluminum in this case), and then decreases as the film is oxidized (thermally by H₂O in this case).

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"Overall performance, affordability and ease of use has made the FS-1 a workhorse for our ALD process as well as equipment development efforts. The next generation FS-1EX provides a combination of higher beam intensity and wider spectral range improving both precision and accuracy. For metallic thin films such as TiN, Pt and Ru, two additional IR wavelengths enhance the ability to monitor film thickness and resistivity in-situ during growth. This enhanced performance helps us to streamline development efforts by effectively understanding the impact of different process conditions on film quality in real-time."

Dr. G. Bruce Rayner, Principal Scientist Atomic Layer Deposition
Kurt J. Lesker Company

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